MOS管作为现代电源与电机驱动的核心开关器件，其可靠工作依赖于对半导体物理特性的准确理解。 体二极管决定续流路径与反向恢复行为，米勒电容（Cgd）则引发栅极电压耦合与虚假导通，二者共同构成开关损耗、直通短路及栅极击穿的主要诱因。
Toshiba Electronic Devices & Storage Corp (TDSC) of Kawasaki, Japan has launched the IX800FXF2YMS4, a dual SiC MOSFET module for industrial equipment, including railway vehicles, renewable energy ...
Toshiba Electronic Devices has launched a dual SiC MOSFET module for industrial equipment, including railway vehicles, renewable energy power generation systems and power conversion systems. The 3300V ...
A European supplier of gallium oxide epiwafers is playing a pivotal role in the birth of an ultra-wide bandgap power electronics industry. TWO CO-FOUNDERS OF NEXTGO EPI TALK TO EDITOR OF CS MAGAZINE, ...
为什么一颗标称100A的MOS，实际只有10A就严重发热？ 本期重点讲清楚： Vgs(th) 为什么不等于完全导通电压 为什么要看 Rds(on) 对应的实际 Vgs 3.3V GPIO为什么不一定能把大功率MOS开透 为什么高边MOS要 ...
本内容遵循CC 4.0 BY-SA版权协议 你是不是也经历过：焊好板子，一上电MOS管就发烫、单片机IO口被拉低、负载不动作、甚至烧掉驱动芯片？网上搜“MOS管怎么接”，答案五花八门——有人让你直接 ...
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